JPH0476218B2 - - Google Patents

Info

Publication number
JPH0476218B2
JPH0476218B2 JP59269855A JP26985584A JPH0476218B2 JP H0476218 B2 JPH0476218 B2 JP H0476218B2 JP 59269855 A JP59269855 A JP 59269855A JP 26985584 A JP26985584 A JP 26985584A JP H0476218 B2 JPH0476218 B2 JP H0476218B2
Authority
JP
Japan
Prior art keywords
type silicon
silicon region
region
semiconductor region
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59269855A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61147570A (ja
Inventor
Shigeto Maruo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP59269855A priority Critical patent/JPS61147570A/ja
Publication of JPS61147570A publication Critical patent/JPS61147570A/ja
Publication of JPH0476218B2 publication Critical patent/JPH0476218B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP59269855A 1984-12-20 1984-12-20 ショットキバリア半導体装置 Granted JPS61147570A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59269855A JPS61147570A (ja) 1984-12-20 1984-12-20 ショットキバリア半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59269855A JPS61147570A (ja) 1984-12-20 1984-12-20 ショットキバリア半導体装置

Publications (2)

Publication Number Publication Date
JPS61147570A JPS61147570A (ja) 1986-07-05
JPH0476218B2 true JPH0476218B2 (en]) 1992-12-03

Family

ID=17478134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59269855A Granted JPS61147570A (ja) 1984-12-20 1984-12-20 ショットキバリア半導体装置

Country Status (1)

Country Link
JP (1) JPS61147570A (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065736B2 (ja) * 1989-12-15 1994-01-19 株式会社東芝 ショットキー・ダイオード
JPH06121513A (ja) * 1992-10-06 1994-04-28 Sumitomo Metal Mining Co Ltd 磁気アクチュエータ
JP2002076371A (ja) * 2000-06-12 2002-03-15 Fuji Electric Co Ltd 半導体装置
DE102004053761A1 (de) 2004-11-08 2006-05-18 Robert Bosch Gmbh Halbleitereinrichtung und Verfahren für deren Herstellung
JP4863430B2 (ja) * 2005-01-28 2012-01-25 パナソニック株式会社 サージ保護用半導体装置
DE102011087591A1 (de) * 2011-12-01 2013-06-06 Robert Bosch Gmbh Hochspannungs-Trench-Junction-Barrier-Schottkydiode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5168183A (ja) * 1974-12-10 1976-06-12 Nippon Electric Co Shotsutokiseiryusoshi
JPS5935183B2 (ja) * 1975-08-20 1984-08-27 サンケイ電気 （株） シヨツトキバリア半導体装置

Also Published As

Publication number Publication date
JPS61147570A (ja) 1986-07-05

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term